IKW30N60T |
RFQ for IKW30N60T |
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| Product | Manufacturers | Pack | D/C |
| IKW30N60T | - | - | - |
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, limited by Tjmax TC = 25°C TC = 100°C |
IC | 60 30 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 90 | |
| Turn off safe operating area VCE 1200V, Tj 150°C |
- | 90 | |
| Diode forward current TC = 25°C TC = 100°C |
IF | 60 30 | |
| Diode pulsed current, tp limited by Tjmax | IFpuls | 90 | |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150°C |
tSC | 5 | s |
| Power dissipation TC=25°C |
Ptot | 60 30 |
W |
| Operating | Tj | -40...+175 | °C |
| Storage temperature | Tstg | -55...+175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |